2D Materials, 2053-1583

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  1. Semiconductor channel-mediated photodoping in h-BN encapsulated monolayer MoSe2 phototransistors

    Quereda Bernabeu, J., Ghiasi, T. S., van der Wal, C. H. & van Wees, B. J., Apr-2019, In : 2D Materials. 6, 2, 7 p., 025040.

    Research output: Contribution to journalArticleAcademicpeer-review

  2. Bilayer h-BN barriers for tunneling contacts in fully-encapsulated monolayer MoSe2 field-effect transistors

    Ghiasi, T. S., Quereda, J. & van Wees, B. J., 5-Oct-2018, In : 2D Materials. 6, 1, 9 p.

    Research output: Contribution to journalArticleAcademicpeer-review

  3. Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

    Gurram, M., Omar, S. & van Wees, B. J., 1-Jun-2018, In : 2D Materials. 5, 3, 21 p., 032004.

    Research output: Contribution to journalReview articleAcademicpeer-review

  4. Observation of bright and dark exciton transitions in monolayer MoSe2 by photocurrent spectroscopy

    Quereda, J., Ghiasi, T. S., van Zwol, F. A., Wal, C. H. V. D. & van Wees, B. J., 3-Oct-2017, In : 2D Materials. 5, 1, 6 p., 015004.

    Research output: Contribution to journalArticleAcademicpeer-review

  5. Electronic properties of germanane field-effect transistors

    Madhushankar, B. N., Kaverzin, A., Giousis, T., Potsi, G., Gournis, D., Rudolf, P., Blake, G. R., van der Wal, C. H. & van Wees, B. J., 3-Mar-2017, In : 2D Materials. 4, 2, p. 021009 6 p., 2.

    Research output: Contribution to journalArticleAcademicpeer-review

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