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Unification of the hole transport in polymeric field-effect transistors and light-emitting diodes

Tanase, C., Meijer, EJ., Blom, PWM. & de Leeuw, DM., 21-Nov-2003, In : Physical Review Letters. 91, 21, p. art - 216601 4 p., 216601.

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DOI

  • C Tanase
  • EJ Meijer
  • PWM Blom
  • DM de Leeuw

A systematic study of the hole mobility in hole-only diodes and field-effect transistors based on poly(2-methoxy-5-(3('),7(')-dimethyloctyloxy)-p-phenylene vinylene) and on amorphous poly(3-hexyl thiophene) has been performed as a function of temperature and applied bias. The experimental hole mobilities extracted from both types of devices, although based on a single polymeric semiconductor, can differ by 3 orders of magnitude. We demonstrate that this apparent discrepancy originates from the strong dependence of the hole mobility on the charge carrier density in disordered semiconducting polymers.

Original languageEnglish
Article number216601
Pages (from-to)art - 216601
Number of pages4
JournalPhysical Review Letters
Volume91
Issue number21
Publication statusPublished - 21-Nov-2003

    Keywords

  • CONJUGATED POLYMERS, CHARGE-TRANSPORT, EFFECT MOBILITY, SEMICONDUCTORS

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