Unification of the hole transport in polymeric field-effect transistors and light-emitting diodesTanase, C., Meijer, EJ., Blom, PWM. & de Leeuw, DM., 21-Nov-2003, In : Physical Review Letters. 91, 21, p. art - 216601 4 p., 216601.
Research output: Contribution to journal › Article › Academic › peer-review
A systematic study of the hole mobility in hole-only diodes and field-effect transistors based on poly(2-methoxy-5-(3('),7(')-dimethyloctyloxy)-p-phenylene vinylene) and on amorphous poly(3-hexyl thiophene) has been performed as a function of temperature and applied bias. The experimental hole mobilities extracted from both types of devices, although based on a single polymeric semiconductor, can differ by 3 orders of magnitude. We demonstrate that this apparent discrepancy originates from the strong dependence of the hole mobility on the charge carrier density in disordered semiconducting polymers.
|Pages (from-to)||art - 216601|
|Number of pages||4|
|Journal||Physical Review Letters|
|Publication status||Published - 21-Nov-2003|
- CONJUGATED POLYMERS, CHARGE-TRANSPORT, EFFECT MOBILITY, SEMICONDUCTORS