Excitation and transport of hot holes in a magnetic tunnel transistor

Park, B. G., Haq, E., Banerjee, T., Min, B. C., Lodder, J. C. & Jansen, R., 15-Apr-2006, In : Journal of Applied Physics. 99, 8, p. 08S703-1-08S703-3 3 p., 08S703.

Research output: Contribution to journalArticleAcademic

  • B. G. Park
  • E. Haq
  • T. Banerjee
  • B. C. Min
  • J. C. Lodder
  • R. Jansen
Spin-dependent transport of nonequilibrium holes has been investigated using a magnetic tunnel transistor in which a magnetic tunnel junction is combined with a p-type semiconductor. The device can be used for direct hole injection and collection, or in reverse mode in which holes are created by inelastic decay of injected hot electrons via electron-hole pair generation. In the latter case, the collected hole current is larger, and a magnetocurrent (MC) of 90% is observed at an emitter bias of −0.8 V. This positive and large MC indicates that hot holes generated by hot electrons of majority spin contribute mostly to the collector current.
Original languageEnglish
Article number08S703
Pages (from-to)08S703-1-08S703-3
Number of pages3
JournalJournal of Applied Physics
Issue number8
Publication statusPublished - 15-Apr-2006


  • spin polarised transport, magnetoelectronics, hot carriers, hot electron transistors, magnetic tunnelling, ELECTRON TRANSPORT, SPIN-VALVE, TEMPERATURE, FILMS

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