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New Publication: Magneto-Ionic Control of Spin Polarization in Multiferroic Tunnel Junctions

17 December 2019

Ferroelectri (FE) synaptic (memristive) devices are fast and energy efficient. The plasticity (change in resistance) originates from the Tunneling Electroresistance Effect (TER). CogniGron researchers have shown that TER can be as large as 10000 in tunnel junctions made with only 2 nm thick Hafnia-based FE tunnel barriers. Thanks to the unique properties of FE Hafnia, the junctions are so resistive that they can be electroded and wired-bonded, one of the greatest challanges in other FE tunnel junctions.

Reference: Yingfen Wei, Sylvia Matzen, Cynthia P. Quinteros, Thomas Maraoutian, Guillaume Agnus, Philipe Lecoeur & Beatriz Noheda: Magneto-Ionic Control of Spin Polarization in Multiferroic Tunnel Junctions, npj Quantum Materials 17 December 2019.

Last modified:23 December 2019 2.21 p.m.

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