Publication

Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors

Torabi, S., Cherry, M., Duijnstee, E. A., Le Corre, V. M., Qiu, L., Hummelen, J. C., Palasantzas, G. & Koster, L. J. A. 16-Aug-2017 In : ACS Applied Materials and Interfaces. 9, 32, p. 27290-27297 8 p.

Research output: Scientific - peer-reviewArticle

APA

Torabi, S., Cherry, M., Duijnstee, E. A., Le Corre, V. M., Qiu, L., Hummelen, J. C., ... Koster, L. J. A. (2017). Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors. ACS Applied Materials and Interfaces, 9(32), 27290-27297. DOI: 10.1021/acsami.7b06451

Author

Torabi, Solmaz; Cherry, Megan; Duijnstee, Elisabeth A.; Le Corre, Vincent M.; Qiu, Li; Hummelen, Jan C.; Palasantzas, George; Koster, L. Jan Anton / Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 32, 16.08.2017, p. 27290-27297.

Research output: Scientific - peer-reviewArticle

Harvard

Torabi, S, Cherry, M, Duijnstee, EA, Le Corre, VM, Qiu, L, Hummelen, JC, Palasantzas, G & Koster, LJA 2017, 'Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors' ACS Applied Materials and Interfaces, vol 9, no. 32, pp. 27290-27297. DOI: 10.1021/acsami.7b06451

Standard

Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors. / Torabi, Solmaz; Cherry, Megan; Duijnstee, Elisabeth A.; Le Corre, Vincent M.; Qiu, Li; Hummelen, Jan C.; Palasantzas, George; Koster, L. Jan Anton.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 32, 16.08.2017, p. 27290-27297.

Research output: Scientific - peer-reviewArticle

Vancouver

Torabi S, Cherry M, Duijnstee EA, Le Corre VM, Qiu L, Hummelen JC et al. Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors. ACS Applied Materials and Interfaces. 2017 Aug 16;9(32):27290-27297. Available from, DOI: 10.1021/acsami.7b06451


BibTeX

@article{d5f5e0c282ba4940877101e9bfd2257e,
title = "Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors",
abstract = "The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Moreover, we introduce the roughness parameter limits for which the simple parallel-plate capacitor equation is sufficiently accurate for capacitors with one rough electrode. Our results imply that the interface roughness beyond the proposed limits cannot be dismissed unless the independence of the capacitance from the interface roughness is experimentally demonstrated. The practical protocols suggested in our work for the reliable use of the parallel-plate capacitor equation can be applied as general guidelines in various fields of interest.",
keywords = "capacitance, dielectric constant, interface roughness, parallel-plate capacitor equation, thin-film capacitors",
author = "Solmaz Torabi and Megan Cherry and Duijnstee, {Elisabeth A.} and {Le Corre}, {Vincent M.} and Li Qiu and Hummelen, {Jan C.} and George Palasantzas and Koster, {L. Jan Anton}",
year = "2017",
month = "8",
doi = "10.1021/acsami.7b06451",
volume = "9",
pages = "27290--27297",
journal = "ACS Applied Materials & Interfaces",
issn = "1944-8244",
publisher = "AMER CHEMICAL SOC",
number = "32",

}

RIS

TY - JOUR

T1 - Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors

AU - Torabi,Solmaz

AU - Cherry,Megan

AU - Duijnstee,Elisabeth A.

AU - Le Corre,Vincent M.

AU - Qiu,Li

AU - Hummelen,Jan C.

AU - Palasantzas,George

AU - Koster,L. Jan Anton

PY - 2017/8/16

Y1 - 2017/8/16

N2 - The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Moreover, we introduce the roughness parameter limits for which the simple parallel-plate capacitor equation is sufficiently accurate for capacitors with one rough electrode. Our results imply that the interface roughness beyond the proposed limits cannot be dismissed unless the independence of the capacitance from the interface roughness is experimentally demonstrated. The practical protocols suggested in our work for the reliable use of the parallel-plate capacitor equation can be applied as general guidelines in various fields of interest.

AB - The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Moreover, we introduce the roughness parameter limits for which the simple parallel-plate capacitor equation is sufficiently accurate for capacitors with one rough electrode. Our results imply that the interface roughness beyond the proposed limits cannot be dismissed unless the independence of the capacitance from the interface roughness is experimentally demonstrated. The practical protocols suggested in our work for the reliable use of the parallel-plate capacitor equation can be applied as general guidelines in various fields of interest.

KW - capacitance

KW - dielectric constant

KW - interface roughness

KW - parallel-plate capacitor equation

KW - thin-film capacitors

UR - http://www.scopus.com/inward/record.url?scp=85027399879&partnerID=8YFLogxK

U2 - 10.1021/acsami.7b06451

DO - 10.1021/acsami.7b06451

M3 - Article

VL - 9

SP - 27290

EP - 27297

JO - ACS Applied Materials & Interfaces

T2 - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

SN - 1944-8244

IS - 32

ER -

ID: 47655608